1 1 1/12/01 supertex inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." supertex does not assume responsibility for use of devices described and limits its liabi lity to the replacement of devices determined to be defective due to workmanship. no responsibility is assumed for possible omissions or inaccuracies. circuitry and specifications are subject to c hange without notice. for the latest product specifications, refer to the supertex website: http://www.supertex.com. for complete liability information on all supertex products, refer to the most curre nt databook or to the legal/disclaimer page on the supertex website. vp2106 VP2110 note: see package outline section for dimensions. package options p-channel enhancement-mode v ertical dmos fets t o-92 applications ? motor controls ? converters ? amplifiers ? switches ? power supply circuits ? drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) features ? free from secondary breakdown ? low power drive requirement ? ease of paralleling ? low c iss and fast switching speeds ? excellent thermal stability ? integral source-drain diode ? high input impedance and high gain ? complementary n- and p-channel devices advanced dmos technology these enhancement-mode (normally-off) transistors utilize a vertical dmos structure and supertex? well-proven silicon-gate manufacturing process. this combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inher- ent in mos devices. characteristic of all mos structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. supertex? vertical dmos fets are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. bv dss /r ds(on) i d(on) bv dgs (max) (min) to-92 to-236ab* die ? -60v 12 ? -0.5a vp2106n3 -100v 12 ? -0.5a VP2110k1 VP2110nd product marking for sot-23: p1a ? where ? = 2-week alpha date code order number / package ? mil visual screening available. *same as sot-23. all units shipped on 3,000 piece carrier tape reels. ordering information s g d t o-236ab (sot-23) top view s d g absolute maximum ratings drain-to-source voltage bv dss drain-to-gate voltage bv dgs gate-to-source voltage 20v operating and storage temperature -55 c to +150 c soldering temperature* 300 c * distance of 1.6 mm from case for 10 seconds.
2 90% 10% 90% 90% 10% 10% pulse generator v dd r l output d.u.t. t (on) t d(on) t (off) t d(off) t f t r input input output 0v v dd r gen 0v -10v vp2106/VP2110 switching waveforms and test circuit package i d (continuous)* i d (pulsed) power dissipation jc ja i dr *i drm @ t a = 25 c c/w c/w to-236ab -120ma -400ma 0.36w 200 350 -120ma -400ma to-92 -0.25a -0.8a 0.74w 125 170 -0.25a -0.8a * i d (continuous) is limited by max rated t j . thermal characteristics symbol parameter min typ max unit conditions VP2110 -100 vp2106 -60 v gs(th) gate threshold voltage -1.5 -3.5 v v gs = v ds , i d = -1.0ma ? v gs(th) change in v gs(th) with temperature 5.8 6.5 mv/ ci d = -1.0ma, v gs = v ds i gss gate body leakage -1.0 -100 na v gs = 20v, v ds = 0v i dss zero gate voltage drain current -10 av gs = 0v, v ds = max rating v gs = 0v, v ds = 0.8 max rating t a = 125 c i d(on) on-state drain current -0.50 -1.0 a v gs = -10v, v ds = -25v r ds(on) 11 15 v gs = -5v, i d = -0.1a 9.0 12 v gs = -10v, i d = -0.5a ? r ds(on) change in r ds(on) with temperature 0.55 1.0 %/ cv gs = -10v, i d = -0.5a g fs forward transconductance 150 200 m v ds = -25v, i d = -0.5a c iss input capacitance 45 60 c oss common source output capacitance 22 30 pf c rss reverse transfer capacitance 3 8 t d(on) turn-on delay time 4 5 t r rise time 5 8 t d(off) turn-off delay time 5 9 t f fall time 4 8 v sd diode forward voltage drop -1.2 -2.0 v i sd = -0.5a, v gs = 0v t rr reverse recovery time 400 ns i sd = -0.5a, v gs = 0v notes: 1.all d.c. parameters 100% tested at 25 c unless otherwise stated. (pulse test: 300 s pulse, 2% duty cycle.) 2.all a.c. parameters sample tested. bv dss drain-to-source breakdown voltage electrical characteristics (@ 25 c unless otherwise specified) vi d = -1.0ma, v gs = 0v -1 ma static drain-to-source on-state resistance v gs = 0v, v ds = -25v f = 1 mhz v dd = -25v ns i d = -0.5a r gen = 25 ? ? ?
3 t ypical performance curves vp2106/VP2110 output characteristics -2.0 -1.6 -1.2 -0.8 -0.4 0 saturation characteristics -1.0 -0.8 -0.6 -0.4 -0.2 -0 maximum rated safe operating area -0.1 -100 -10 -1.0 -0.01 -0.1 -1.0 -0.001 thermal response characteristics thermal resistance (normalized) 1.0 0.8 0.6 0.4 0.2 0 0.001 10 0.01 0.1 1.0 transconductance vs. drain current power dissipation vs. ambient temperature 0 150 100 50 1.0 0.5 0 125 75 25 to-236ab v ds = 25v to-236ab (dc) to-236ab (pulsed) to-92 (dc) 0 -10 -20 -30 -50 -40 0-2-4- 6 -10 -8 to-92 (pulsed) 250 200 150 100 50 0 0 -0.2 -0.4 -0.6 -1.0 -0.8 -7v -6v -5v -4v -3v -8v -9v -7v -6v -5v -4v -8v -9v t a = 25 c to-236ab p d = 0.36w t a = 25 c to-92 p d = 1.0w t a = 25 c to-92 v gs = -10v v ds (volts) i d (amperes) i d (amperes) v ds (volts) v gs = -10v g fs (millisiemens) i d (amperes) t a ( c) p d (watts) t a = 125 c t a = 25 c t a = -55 c v ds (volts) i d (amperes) t p (seconds)
4 1235 bordeaux drive, sunnyvale, ca 94089 tel: (408) 744-0100 ?fax: (408) 222-4895 www.supertex.com 1 1/12/01 ?001 supertex inc. all rights reserved. unauthorized use or reproduction prohibited. vp2106/VP2110 t ypical performance curves gate drive dynamic characteristics on-resistance vs. drain current transfer characteristics capacitance vs. drain-to-source voltage 100 75 50 25 0 c (picofarads) 0 -10 -20 -30 -40 0-2- 4-6-8-10 -1.0 -0.8 -0.6 -0.4 -0.2 0 -50 0 50 100 150 -1.1 -1.0 20 16 12 8 4 0 1.4 1.2 1.0 0.8 0.6 -10 -8 -6 -4 -2 0 -50 0 50 100 150 35 pf v gs = -10v 125 c 0 -0.2 -0.4 -0.6 -1.0 -0.8 f = 1mhz c iss c oss c rss -0.9 101 pf 2.0 1.6 1.2 0.8 0.4 0 v (th) @ 1ma r ds(on) @ -10v, 0.5a 25 c 0 1.0 2.0 r ds(on) (ohms) bv dss (normalized) t j ( c) i d (amperes) bv dss variation with temperature v gs = -5v t j ( c) v gs(th) (normalized) v (th) and r ds variation with temperature v gs (volts) i d (amperes) r ds(on) (normalized) v ds = -25v t a = -55 c q g (nanocoulombs) v gs (volts) v ds (volts) v ds = -40v v ds = -10v
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